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216200 D150M CA2813B SKIIP KA7805E 69200 MHR66TF 2N5108
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 BAS86
Small-Signal Diode Schottky Diode
Features
For general purpose applications. This diode features low turn-on voltage. This device are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the DO-35 case with type designation BAT86.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Green
Maximum Ratings and Thermal Characteristics
(TA=25oC unless otherwise noted.)
Parameter Continuous reverse voltage Forward continuous current at Tamb=25oC Repetitive peak forward current at tp<1s, <0.5, Tamb=25oC Power dissipation at Tamb=25oC Thermal resistance junction to ambient air Junction temperature Ambient operating temperature range Storage temperature range Symbol VR IF IFRM Ptot RJA Tj Tamb TS Value 50 200 500 200 300
(1)
Unit Volts mA mA mW
o
(1)
(1)
(1)
C/W
o
125 -65 to +125 -65 to +150
C C C
o
o
Notes:
1. Valid provided that electrodes are kept at ambient temperature.
699
Electrical Characteristics
(TJ=25oC unless otherwise noted.) Parameter Reverse breakdown voltage Leakage current Symbol V(BR)R IR Test Condition IR=10uA (pulsed) VR=25V Pulse Test tp<300us, <2% IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=1V, f=1MHz IF=10mA, IR=10mA, IR=1mA Min. 50 Typ. 0.2 0.200 0.275 0.365 0.460 0.700 Max. 0.5 0.300 0.380 0.450 0.600 0.900 8 5 Unit Volts uA
Forward voltage
VF
Volt
Capacitance Reverse recovery time
Ctot trr
pF ns
700


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