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BAS86 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the DO-35 case with type designation BAT86. Mechanical Data Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Green Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted.) Parameter Continuous reverse voltage Forward continuous current at Tamb=25oC Repetitive peak forward current at tp<1s, <0.5, Tamb=25oC Power dissipation at Tamb=25oC Thermal resistance junction to ambient air Junction temperature Ambient operating temperature range Storage temperature range Symbol VR IF IFRM Ptot RJA Tj Tamb TS Value 50 200 500 200 300 (1) Unit Volts mA mA mW o (1) (1) (1) C/W o 125 -65 to +125 -65 to +150 C C C o o Notes: 1. Valid provided that electrodes are kept at ambient temperature. 699 Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Reverse breakdown voltage Leakage current Symbol V(BR)R IR Test Condition IR=10uA (pulsed) VR=25V Pulse Test tp<300us, <2% IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=1V, f=1MHz IF=10mA, IR=10mA, IR=1mA Min. 50 Typ. 0.2 0.200 0.275 0.365 0.460 0.700 Max. 0.5 0.300 0.380 0.450 0.600 0.900 8 5 Unit Volts uA Forward voltage VF Volt Capacitance Reverse recovery time Ctot trr pF ns 700 |
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